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Polar TM HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
IXFB210N20P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
200V
210A
10.5 m Ω
200 ns
Avalanche Rated
Fast Intrinsic Diode
PLUS264 TM
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
V GSM
I D25
I LRMS
I DM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
200
200
± 20
± 30
210
160
600
V
V
V
V
A
A
A
G
D
S
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
I A
E AS
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
F C
Weight
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175 ° C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
105
4
20
1500
-55 ... +175
175
-55 ... +175
300
260
30..120/6.7..27
10
A
J
V/ns
W
° C
° C
° C
° C
° C
N/lb.
g
Features
Low Package Inductance
Avalanche Rated
High Current Handling Capability
Low R DS(ON) and Q G
Fast Intrinsic Diode
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
DC-DC Coverters
Battery Chargers
Switch-Mode and Resonant-Mode
BV DSS
V GS(th)
I GSS
I DSS
V GS = 0V, I D = 3mA
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
200
2.5
4.5
± 200
25
2
V
V
nA
μ A
mA
Power Supplies
DC Choppers
AC and DC Motor Drives
Uninterrupted Power Supplies
High Speed Power Switching
Applications
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
10.5
m Ω
? 2010 IXYS CORPORATION, All Rights Reserved
DS100018A(05/10)
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